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Analytical threshold voltage model for short channel n+-p+ double-gate SOI MOSFETs

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3 Author(s)
K. Suzuki ; Fujitsu Labs. Ltd., Atsugi, Japan ; Y. Tosaka ; T. Sugii

Solving a two-dimensional (2-D) Poisson equation in the channel region, we have developed models for short channel n+-p+ double-gate SOI MOSFETs, and showed how to design a device with a decreased gate length, suppressing short channel threshold voltage shift ΔVth and subthreshold swing (S-swing) degradation. According to our model, we can design a 0.05 μm LG device of which threshold voltage is 0.2 V, ΔVth is 25 mV, and S-swing is 65 mV/decade with a 3-nm-thick gate oxide and 12-nm-thick SOI

Published in:

IEEE Transactions on Electron Devices  (Volume:43 ,  Issue: 5 )