Referenced Items are not available for this document.
A comprehensive modelling of the band-to-band tunnelling gate induced drain leakage (GIDL) current is conducted, based on exact WKB tunnel transparency calculations. The authors' GIDL model explains reasonably well the asymmetrical variations of the GIDL current with gate and drain voltages. In particular, it makes it possible to obtain a quantitative description of the evolution of the logarithmic slope of the GIDL current against the reciprocal effective electric field with the gate and drain voltages
Published in:
Electronics Letters
(Volume:32
,
Issue:
8
)
Date of Publication: 11 Apr 1996
- Page(s):
- 767 - 769
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5251420
- Digital Object Identifier :
- 10.1049/el:19960538
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 11 Apr 1996
- Sponsored by :
- Institution of Engineering and Technology
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