By Topic

Frequency-tunable millimetre-wave signal generation using a monolithic passively mode-locked semiconductor laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Liu, H.F. ; Photonics Res. Lab., Melbourne Univ., Parkville, Vic., Australia ; Arahira, S. ; Kunii, T. ; Ogawa, Y.

Repetition frequency tuning characteristics of a monolithic passively mode-locked distributed Bragg reflector semiconductor laser are investigated. By injecting current at a passive phase control section, a tuning range of 400 MHz is achieved while keeping the pulse characteristics nearly unchanged. Varying the absorber reverse bias offers an alternative to tune the frequency. By combining these techniques, a total tuning range of 1 GHz is realised

Published in:

Electronics Letters  (Volume:32 ,  Issue: 8 )