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Novel Dielectric-Constant Evaluation Method for Low- k Multilevel Metallization Structures in ULSI

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2 Author(s)
Yoshio Takimoto ; Consortium for Adv. Semicond. Mater. & Related Technol. (CASMAT), Tokyo ; Nobuhide Maeda

Precise evaluation of the dielectric constants of low-k interlayer dielectrics in ULSI is essential in order to analyze the effects of their fabrication process and their structure on their k -values. However, this is difficult to achieve in complicated multilayer structures with various kinds of stacked films having different physical properties. To address this problem, we have developed a novel evaluation method that makes it possible to precisely analyze the effects of structure and fabrication process on the k -values of dielectrics.

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:22 ,  Issue: 2 )