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Broad-area semiconductor lasers with spatially modulated reflectivity of the mirrors

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1 Author(s)
Mroziewicz, B. ; Inst. of Electron Technol., Warsaw, Poland

Emission properties of broad-area semiconductor lasers with stripes etched on one of the laser mirrors, perpendicular to the p-n junction plane, are described. Spatial modulation of the mirror reflectivity induced lasing of individual, phase coupled filaments and significantly affected the shape of the laser output beam. The cross-section of the beam became almost circular and had an intensity distribution along its horizontal and vertical axes that could be approximated by a Gaussian function

Published in:

Electronics Letters  (Volume:32 ,  Issue: 4 )

Date of Publication:

15 Feb 1996

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