Referenced Items are not available for this document.
Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluation of the charge collection which induces upset in dynamic random access memories (DRAMs). Soft error susceptibility in DRAMs as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reverse-biased n+ p junctions with various barrier well structures has been compared with that with a conventional well in a p- epitaxial layer on a p+ substrate
Published in:
Nuclear Science, IEEE Transactions on
(Volume:43
,
Issue:
2
)
Date of Publication: Apr 1996
- Page(s):
- 696 - 704
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 5277121
- Digital Object Identifier :
- 10.1109/23.490913
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1996
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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