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Pulsed I_{d} V_{g} Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

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6 Author(s)

The pulsed current-voltage (I-V) measurement technique with pulse times ranging from ~17 ns to ~6 ms was employed to study the effect of fast transient charging on the threshold voltage shift DeltaV t of MOSFETs. The extracted DeltaV t values are found to be strongly dependent on the band bending of the dielectric stack defined by the high-kappa and interfacial layer dielectric constants and thicknesses, as well as applied voltages. Various hafnium-based gate stacks were found to exhibit a similar trap density profile.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 6 )