Cart (Loading....) | Create Account
Close category search window
 

Positive Bias Temperature Instability Effects in nMOSFETs With \hbox {HfO}_{2}/\hbox {TiN} Gate Stacks

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ioannou, D.P. ; IBM Syst. & Technol. Group, Essex Junction, VT ; Mittl, S. ; La Rosa, G.

The positive bias temperature instability (PBTI) and the stress-induced leakage current (SILC) effects are thoroughly examined in nFETs with SiO2/HfO2/TiN dual-layer gate stacks under a wide range of bias and temperature stress conditions. Experimental evidence of the SILC increase with time is obtained suggesting the activation of a trap generation mechanism. Threshold voltage (V T) instability is found to be the result of a complicated interplay of two separate mechanisms; filling of preexisting electron traps versus trap generation each one dominating at different stress condition regimes. Furthermore, V T instability relaxation experiments, undertaken at judiciously chosen conditions, show that the preexisting and stress-induced traps exhibit similar detrapping kinetics indicating that both types of traps may have similar characteristics. Finally, it is shown that the role of the SILC effect (and the associated trap generation component) on V T instability is process dependent and that SILC reduction is accompanied by enhancement of the PBTI device lifetime.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:9 ,  Issue: 2 )

Date of Publication:

June 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.