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Device simulation of charge collection and single-event upset

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1 Author(s)
P. E. Dodd ; Sandia Nat. Labs., Albuquerque, NM, USA

In this paper we review the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. We present an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. We examine unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM's), and SEU in static random access memories (SRAM's). We conclude with a few thoughts on future issues likely to confront the SEU device modeler

Published in:

IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 2 )