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Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP–GaInP High-Power Diode Laser Bars

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11 Author(s)
Ye Wang ; Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun ; Li Qin ; Yan Zhang ; Zhenhua Tian
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The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 14 )

Date of Publication:

July15, 2009

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