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A review of the techniques used for modeling single-event effects in power MOSFETs

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5 Author(s)
Johnson, G.H. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Palau, J.-M. ; Dachs, C. ; Galloway, K.F.
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Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 2 )

Date of Publication:

Apr 1996

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