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Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

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2 Author(s)
Titus, J.L. ; NSWC, Crane, IN, USA ; Wheatley, C.F.

Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 2 )

Date of Publication:

Apr 1996

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