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Observation of inversion layers at Ga2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy

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3 Author(s)
Passlack, M. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Hong, M. ; Mannaerts, J.P.

Strong inversion has been observed at Ga2O3-GaAs interfaces fabricated using in-situ multiple-chamber molecular beam epitaxy. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ~600°C by electron beam evaporation using a Gd3Ga5O12 single crystal source. The formation of inversion layers in both n- and p-type GaAs has been clearly established by quasi-static capacitance-voltage measurements

Published in:

Electronics Letters  (Volume:32 ,  Issue: 3 )

Date of Publication:

1 Feb 1996

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