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Browse Journals & Magazines > Solid-State Circuits, IEEE Jo ...> Volume:44 Issue:5 Help

A Fully Integrated 2 ,\times, 2 Power Amplifier for Dual Band MIMO 802.11n WLAN Application Using SiGe HBT Technology

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5 Author(s)
Hsin-Hsing Liao ; Broadcom Corp., San Diego, CA ; Hao Jiang ; Shanjani, P. ; King, J.
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A fully monolithic 2 times 2(2 times 5 GHz-band, 2 times 2.4 GHz-band) power amplifier (PA) implemented in a 0.18 mum Silicon Germanium (SiGe) HBT process has been developed for a dual band MIMO 802.11n WLAN system. In order to achieve the required performance for the 5 GHz band while maintaining a high level of integration, different approaches have been investigated. A special Through-Wafer-Via (TWV) process on Si wafer was developed and utilized for this 2 times 2 PA. From fabricated 2 times 2 chip measurement results, both 5 GHz-band and 2.4 GHz-band PAs show above 17 dBm linear power output for -28 dB EVM and more than 18 dBm with >14% efficiency for 5 GHz-band and 19% efficiency for 2.4 GHz-band at -25 dB EVM linear output.

Published in:
Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 5 )

Date of Publication: May 2009

Page(s):
1361 - 1371
ISSN :
0018-9200
INSPEC Accession Number:
10615907
Digital Object Identifier :
10.1109/JSSC.2009.2015817
Product Type:
Journals & Magazines
Date of Current Version :
02 May 2009
Issue Date :
May 2009
Sponsored by :
IEEE Solid-State Circuits Society

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