By Topic

A Fully Integrated 2 ,\times, 2 Power Amplifier for Dual Band MIMO 802.11n WLAN Application Using SiGe HBT Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hsin-Hsing Liao ; Broadcom Corp., San Diego, CA ; Hao Jiang ; Shanjani, P. ; King, J.
more authors

A fully monolithic 2 times 2(2 times 5 GHz-band, 2 times 2.4 GHz-band) power amplifier (PA) implemented in a 0.18 mum Silicon Germanium (SiGe) HBT process has been developed for a dual band MIMO 802.11n WLAN system. In order to achieve the required performance for the 5 GHz band while maintaining a high level of integration, different approaches have been investigated. A special Through-Wafer-Via (TWV) process on Si wafer was developed and utilized for this 2 times 2 PA. From fabricated 2 times 2 chip measurement results, both 5 GHz-band and 2.4 GHz-band PAs show above 17 dBm linear power output for -28 dB EVM and more than 18 dBm with >14% efficiency for 5 GHz-band and 19% efficiency for 2.4 GHz-band at -25 dB EVM linear output.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 5 )