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A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

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4 Author(s)
Kidwai, A.A. ; Mobility Wireless Group, Intel Corp., Hillsboro, OR ; Chang-tsung Fu ; Jensen, J.C. ; Taylor, S.S.

A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P1dB greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm2 of die area.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 5 )