Wafer-Level Packaged Light-Emitting Diodes Using Photodielectric Resin

A large area (1600 mum times 800 mum) high-brightness light-emitting diode (HB LED) employing rearranged metal pads and multipassivation layers is presented. To enlarge the active layer with a smaller mesa area and improve package productivity using large bonding pads, two electrodes were used to fabricate the LED; a primary electrode was in contact with the n, p-GaN as a conventional LED, and the second electrode was connected to the primary electrode with a passivation layer having photodielectric resin interposed between them. The LED was directly bonded to the metal-core printed circuit board without wire bonding or epoxy molding. The resultant HB LED has a low forward voltage ( ~3.2 V at 350 mA) due to the optimized n, p-contact scheme, and an optical power of 75 mW with no encapsulation.