By Topic

Wafer-Level Packaged Light-Emitting Diodes Using Photodielectric Resin

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sang-Mook Kim ; Korea Photonics Technol. Inst., Gwangju ; Kwang-Cheol Lee ; Young Moon Yu ; Jong Hyeob Baek
more authors

A large area (1600 mum times 800 mum) high-brightness light-emitting diode (HB LED) employing rearranged metal pads and multipassivation layers is presented. To enlarge the active layer with a smaller mesa area and improve package productivity using large bonding pads, two electrodes were used to fabricate the LED; a primary electrode was in contact with the n, p-GaN as a conventional LED, and the second electrode was connected to the primary electrode with a passivation layer having photodielectric resin interposed between them. The LED was directly bonded to the metal-core printed circuit board without wire bonding or epoxy molding. The resultant HB LED has a low forward voltage ( ~3.2 V at 350 mA) due to the optimized n, p-contact scheme, and an optical power of 75 mW with no encapsulation.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 6 )