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Ring oscillators with optical and electrical readout based on hybrid GaAs MQW modulators bonded to 0.8 μm silicon VLSI circuits

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17 Author(s)

Loaded and unloaded ring-oscillator circuits with an electrical and surface-normal 850 nm optical readout are fabricated using a hybrid 0.8 μm silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscillation frequency of these circuits show total capacitance associated with the flip-chip-bonded optical MQW modulators as low as 52 fF

Published in:

Electronics Letters  (Volume:31 ,  Issue: 22 )