By Topic

npn controlled lateral insulated gate bipolar transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zuxin Qin ; Dept. of Electr. & Electron. Eng., De Monfort Univ., Leicester, UK ; E. M. Sankara Narayanan

A fast switching npn controlled lateral insulated gate bipolar transistor (NC-LIGBT) suitable for high voltage integrated circuits is proposed. An open base npn transistor incorporated within the device strongly influences its on-state and switching behaviour. Further, by varying the ratio between n+/p+ regions or the concentration of the p well at the anode end, a suitable trade-off between forward drop and turn-off time can be easily realised by this single gated device

Published in:

Electronics Letters  (Volume:31 ,  Issue: 23 )