Cart (Loading....) | Create Account
Close category search window

Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ahrenkiel, R.K. ; National Renewable Energy Laboratory, Golden, Colorado 80401 ; Johnston, S.W. ; Webb, J.D. ; Gedvilas, L.M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

High-quality, thin-film, lattice-matched (LM) InAsyP1-y/InxGa1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1-y/InxGa1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 8 )

Date of Publication:

Feb 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.