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Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates

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6 Author(s)
Ahrenkiel, R.K. ; National Renewable Energy Laboratory, Golden, Colorado 80401 ; Johnston, S.W. ; Webb, J.D. ; Gedvilas, L.M.
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High-quality, thin-film, lattice-matched (LM) InAsyP1-y/InxGa1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1-y/InxGa1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 8 )

Date of Publication:

Feb 2001

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