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Direct observation of self-focusing near the diffraction limit in polycrystalline silicon film

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5 Author(s)
Choi, Yunjin ; Center for Near-Field Atom-Photon Technology and Department of Physics, Seoul National University, Seoul 151-742, Korea ; Park, June-H. ; Kim, Myong R. ; Jhe, Wonho
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We present direct observation of self-focusing near the diffraction limit by measuring the beam-spot size with a scanning fiber probe tip. We have used the polycrystalline silicon film, which exhibits a reverse-saturation (Im χ(3)≈8×10-3esu) and self-focusing (Re χ(3)≈2×10-2esu), as measured by the conventional z-scan method with He–Ne laser. It is observed that the beam radius of about its wavelength becomes smaller as the input laser intensity is increased, which indicates that the self-focusing effect dominates over the reverse saturation in the 300-nm-thick sample. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 7 )