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Voltage induced photoluminescence quenching in porous silicon revisited

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2 Author(s)
Reshotko, M.R. ; The Racah Institute of Physics, The Hebrew University of Jerusalem 91904, Jerusalem, Israel ; Balberg, I.

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We have reexamined the features of the voltage induced quenching of the photoluminescence in solid state structures in which the active material is porous silicon. By comparing the increase of the quenching due to the increase of temperature or bias with the corresponding increase in the electrical transport and phototransport, we conclude that this effect is not a field-enhanced carrier-separation effect, as suggested previously. Rather, this is a thermal effect, which is very pronounced, due to the inefficient cooling in the open, coral-like structure of luminescent porous silicon. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 6 )

Date of Publication:

Feb 2001

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