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Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

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3 Author(s)
Chon, Uong ; Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea ; Gyu-Chul Yi ; Jang, Hyun M.

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Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 °C were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2Pr) and the coercive field (Ec) were in the range of 26–28 μC/cm2and 50–75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5×1010 read/write switching cycles at a frequency of 1 MHz. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 5 )

Date of Publication:

Jan 2001

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