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Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

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10 Author(s)
Chen, C.L. ; Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 ; Shen, J. ; Chen, S.Y. ; Luo, G.P.
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Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of <100>BSTO//<100>MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 5 )

Date of Publication:

Jan 2001

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