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Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

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3 Author(s)
Oiwa, A. ; Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki, 213-0012 Japan ; SÅ‚upinski, T. ; Munekata, H.

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The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 4 )

Date of Publication:

Jan 2001

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