Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1341219
We demonstrate the possibility of simultaneous determination of the type and electrical charge state of dislocations in GaAs by cross-sectional scanning tunneling microscopy (STM). The methodology is demonstrated for a dissociated perfect dislocation in highly Si-doped GaAs(110) surfaces. The STM images of the dislocation penetrating GaAs cleavage surface show that both partial dislocation cores as well as the stacking fault between the two partial dislocation cores are negatively charged. © 2001 American Institute of Physics.