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Amorphous silicon junction field-effect transistor for digital and analog applications

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4 Author(s)
Caputo, D. ; Department of Electronic Engineering, University of Rome “La Sapienza” via Eudossiana 18, 00184 Rome, Italy ; De Cesare, G. ; Kellezi, V. ; Palma, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1289912 

A hydrogenated amorphous silicon field-effect transistor suitable for digital and analog applications is described. The device consists of a p+-i-n- junction, with the drain and source contacts connected to the n- layer and the control gate electrode to the p+ layer. As in the corresponding crystalline junction field-effect transistor, the channel resistivity is modulated by the gate voltage. The selection of the thickness of the intrinsic layer and the doping and thickness of the n layer is critical for correct operation of the device. A device with a well defined triode and saturation region was manufactured. A transconductance of 1.5×10-6A/V at VDS=25 V was achieved. This value is comparable to that of state-of-the-art thin-film transistors. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 9 )

Date of Publication:

Aug 2000

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