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We present an application of an active emitting cantilever probe for scanning near-field optical microscopy and scanning force microscopy. A vertical cavity surface emitting laser (VCSEL) integrated in a galliumarsenide (GaAs) cantilever serves as a light source at 980 nm emission wavelength that is below the band gap energy of the GaAs substrate material. The VCSEL of 8 μm diameter is centered with respect to the metalized GaAs tip and illuminates a small near-field aperture at its apex. Aperture fabrication is accomplished by a proper thermal metal evaporation process. Optical measurements on a Fischer projection pattern revealed an edge resolution of about 80 nm. © 2000 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:77
,
Issue:
8
)
Date of Publication: Aug 2000
- Page(s):
- 1071 - 1073
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1289261
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Aug 2000
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