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Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001¯) face

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6 Author(s)
Fukuda, K. ; Ultra-Low-Loss Power Device Technology Research Body and Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Cho, W.J. ; Arai, K. ; Suzuki, S.
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The C(0001¯) face of silicon carbide (SiC) has superior properties such as a faster oxidation ratio and a smoother surface compared with the Si(0001) face. We have investigated the oxidation and post-oxidation annealing effects on the capacitance–voltage and the interface state density (Dit) of n-type SiC metal–oxide–semiconductor (MOS) structures formed on the C(0001¯) face. It was found that pyrogenic oxidation and hydrogen annealing above 700 °C reduced Dit near the conduction-band edge. The value of Dit at Ec-E=0.2 eV is 1×1012eV-1cm-2, which is comparable with that of the MOS structure formed on the Si(0001) face. However, the value of Dit around the deep level at Ec-E=0.6 eV is one order of magnitude higher than that of n-type MOS structures formed on the Si(0001) face. It is very important to reduce Dit at the deep level for a high-quality SiO2/SiC interface on the 4H-SiC C(0001¯) face. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:77 ,  Issue: 6 )