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X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

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4 Author(s)
Lin, Yow-Jon ; Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China ; Tsai, Chang-Da ; Lyu, Yen-Tang ; Lee, Ching-Ting

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We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 5 )

Date of Publication:

Jul 2000

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