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Browse Journals & Magazines > Applied Physics Letters ...> Volume:77 Issue:3 Help

In-plane magnetophotoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

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4 Author(s)
Kim, Yongmin ; National High Magnetic Field Laboratory–Los Alamos National Laboratory, Los Alamos, New Mexico 87545 and Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul, Korea ; Perry, C.H. ; Simmons, J.A. ; Klem, J.F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.126985 

In-plane magnetic-field photoluminescence spectra from a series of n-type modulation-doped GaAs/Al0.3Ga0.7As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sublevel states. The magnetic-field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely, a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:77 ,  Issue: 3 )

Date of Publication: Jul 2000

Page(s):
388 - 390
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.126985
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2000

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