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Thermal dynamics of VO2 films within the metal–insulator transition: Evidence for chaos near percolation threshold

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4 Author(s)
de Almeida, L.A.L. ; Universidade Federal da Paraı´ba, Department of Electrical Engineering, 58109-970, Campina Grande, PB, Brazil ; Deep, G.S. ; Lima, A.M.N. ; Neff, H.

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The thermal dynamics of thin vanadium dioxide films at the martensitic metal–insulator phase transition has been evaluated experimentally by thermal excitation spectroscopy. Over the transition region, the device becomes highly nonlinear, and its bolometric performance is affected. At low thermal cycling rates for a temperature around the percolation threshold, the device stochastically switches into an unusual pattern. The originally smooth and monotonic shape of the R(T) curve for minor loops suddenly becomes unstable and unpredictable. By direct observation of at least two strange attractors, the phenomenon clearly has been identified as chaotic. Bolometric performance of VO2 based devices in the transition region may suffer strong degradation for low thermal cycling rates. In this region, sensor responsivity for periodic thermal excitation is significantly reduced. Resistance noise is 1/f-type and self-generated oscillations were observed at frequency ≪10-2Hz. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:77 ,  Issue: 26 )

Date of Publication: Dec 2000

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