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Strain-induced diffusion in a strained Si1-xGex/Si heterostructure

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4 Author(s)
Lim, Y.S. ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 337-1 Gusung-dong, Yusung-ku, Daejon 305-701, Korea ; Lee, J.Y. ; Kim, H.S. ; Moon, D.W.

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Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:77 ,  Issue: 25 )