IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:77 Issue:24 Help

Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kim, D.M. ; Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street S.E., Minneapolis, Minnesota 55455

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1332404 

Optoelectronic responses in a pseudomorphic p-channel modulation-doped field-effect transistor (p-MODFET) on GaAs have been characterized. Semiempirical models are provided and verified with experimental data. Significantly suppressed drain photoresponse and reduced gate photoresponse have been observed in p-MODFET due to the low hole mobility and high Schottky barrier on the InGaP layer. The drain photoresponse is predominantly modulated by the photoconductive effect of excess majority carriers while the photovoltage and photonic gate response are governed by the photovoltaic effect caused by excess minority carriers and energy barriers between the channel and dopant layers. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:77 ,  Issue: 24 )

Date of Publication: Dec 2000

Page(s):
4043 - 4045
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1332404
Date of Current Version :
18 June 2009
Issue Date :
Dec 2000

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.