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Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si

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4 Author(s)
Benton, J.-L. ; Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 ; Boone, T. ; Jacobson, D.C. ; Rafferty, C.S.

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Detection and gettering of Co contamination in processed Si is an important issue in integrated circuit fabrication. In this work, Co was intentionally introduced into Si by ion implantation, and its diffusion monitored by secondary ion mass spectroscopy. The surface layer recombination lifetime in p/p+ epitaxial Si is unaffected by the Co at doses of 1×1011cm-2 or 1×1012cm-2. In the case of 2.5 MeV, 4×1014B/cm2 ion implanted bulk Si, two mechanisms for Co redistribution during high temperature furnace, 900 °C, 30 min, processing are evident. First, regions of high boron concentration provide gettering sites for Co contamination. Second, the final distribution of Co in Si reflects ion-implantation induced defect evolution during annealing. Both mechanisms will operate during device processing and will control the effect of the metal on the electrical properties of the Si. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 24 )