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This letter describes integration of GaN with Si using a AuGe alloy as a bonding material. GaN is first grown on GaAs and then GaN/GaAs/AuGe/Si and GaAs/GaN/AuGe/Si structures are fabricated by wafer bonding. For the latter structure, the GaAs substrate is removed by mechanical and chemical etching. From the current–voltage measurements of both structures, it is found that the bonded interfaces do not obstruct the carrier transport. Furthermore, the optical reflection measurements reveal that AuGe works well as a mirror, which is a suitable characteristic for the integration of GaN light-emitting devices with Si. © 2000 American Institute of Physics.