By Topic

Optical losses in porous silicon waveguides in the near-infrared: Effects of scattering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ferrand, P. ; Laboratoire de Spectrométrie Physique, Université J. Fourier-CNRS (UMR 5588), BP 87, 38402 Saint Martin d’Hères Cedex, France ; Romestain, R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Benefitting from the long path inside planar waveguides, we have investigated the optical losses of porous silicon, in the continuous 0.8–1.6 μm (0.77–1.55 eV) range. The obtained values, typically a few cm-1, are 1 order of magnitude larger than “pure” absorption losses measured previously. The other main sources of loss, including scattering on both interface roughness and nanocrystallites, are invoked. Calculations give the same order of magnitude as measurements. We also detected scattered light close to the direct beam. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 22 )