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Browse Journals & Magazines > Applied Physics Letters ...> Volume:77 Issue:21 Help

Measurement of the direct energy gap of coherently strained SnxGe1-x/Ge(001) heterostructures

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2 Author(s)
Ragan, R. ; Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 ; Atwater, Harry A.

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The direct energy gap has been measured for coherently strained SnxGe1-x alloys on Ge(001) substrates with 0.035≪x≪0.115 and film thickness 50–200 nm. The energy gap determined from infrared transmittance data for coherently strained SnxGe1-x alloys indicates a large alloy contribution and a small strain contribution to the decrease in direct energy gap with increasing Sn composition. These results are consistent with a deformation potential model for changes in the valence and conduction band density of states with coherency strain for this alloy system. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:77 ,  Issue: 21 )

Date of Publication: Nov 2000

Page(s):
3418 - 3420
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1328097
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2000

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