IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:77 Issue:21 Help

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Alt, H.Ch. ; Engineering Physics, FHM-University of Applied Sciences, D-80001 Munich, Germany ; Egorov, A.Yu. ; Riechert, H. ; Wiedemann, B.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1328096 

Fourier-transform infrared absorption measurements have been carried out in the two-phonon region of GaAs. Implantation of the nitrogen isotopes 14N and 15N, respectively, into bulk GaAs shows that a local vibrational mode at 471 cm-1 (14N) is due to isolated nitrogen. The band is also found in GaAs1-xNx(0≪x≪0.03) layers grown by solid-source molecular beam epitaxy. The strength of the band correlates quantitatively with the decrease of the lattice parameter determined by x-ray diffraction for x≪0.01 and can be used for the assessment of the nitrogen fraction incorporated substitutionally on anion lattice sites. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:77 ,  Issue: 21 )

Date of Publication: Nov 2000

Page(s):
3331 - 3333
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1328096
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2000

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.