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Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers

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7 Author(s)
Alt, H.Ch. ; Engineering Physics, FHM-University of Applied Sciences, D-80001 Munich, Germany ; Egorov, A.Yu. ; Riechert, H. ; Wiedemann, B.
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Fourier-transform infrared absorption measurements have been carried out in the two-phonon region of GaAs. Implantation of the nitrogen isotopes 14N and 15N, respectively, into bulk GaAs shows that a local vibrational mode at 471 cm-1 (14N) is due to isolated nitrogen. The band is also found in GaAs1-xNx(0≪x≪0.03) layers grown by solid-source molecular beam epitaxy. The strength of the band correlates quantitatively with the decrease of the lattice parameter determined by x-ray diffraction for x≪0.01 and can be used for the assessment of the nitrogen fraction incorporated substitutionally on anion lattice sites. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 21 )

Date of Publication:

Nov 2000

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