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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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6 Author(s)
Ibbetson, J.P. ; Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 ; Fini, P.T. ; Ness, K.D. ; DenBaars, S.P.
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The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 Å. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:77 ,  Issue: 2 )