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Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

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6 Author(s)
Polimeni, A. ; Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica, Università degli Studi di Roma “La Sapienza,” Piazzale A. Moro 2, I-00185 Roma, Italy ; Capizzi, M. ; Geddo, M. ; Fischer, M.
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InxGa1-xAs1-yNy/GaAs single quantum wells emitting at room temperature in the wavelength range λ=(1.3–1.55) μm have been studied by photoluminescence (PL). By increasing temperature, we find that samples containing nitrogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. The temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, the extent of the thermal shift of the free exciton energy for different y indicates that the electron band edge has a localized character which increases with nitrogen content. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 18 )