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Photoluminescence of InAs quantum dots grown on GaAs surface

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4 Author(s)
Wang, J.Z. ; Department of Physics and the Advanced Materials Research Institute, The Hong Kong University of Science and Technology, Clearwater Bay, Kowloon, Hong Kong ; Yang, Z. ; Yang, C.L. ; Wang, Z.G.

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InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost temperature-independent linewidth, and fast thermal quenching, are discussed in terms of the strong quantum confinement effects due to the absence of a cap layer and the lack of carrier redistribution channel caused by the small number of QDs capable of contributing to PL and the high-density surface defects. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 18 )