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Single-electron transistor strongly coupled to an electrostatically defined quantum dot

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4 Author(s)
Lu, W. ; Department of Physics, Rice University, Houston, Texas 77005 ; Rimberg, A.J. ; Maranowski, K.D. ; Gossard, A.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1320455 

A system is described in which an Al-based superconducting single-electron transistor (S–SET) is fabricated directly above an electrostatically defined quantum dot formed in a two-dimensional electron gas. This arrangement allows the coupling capacitance between the S–SET central island and the dot to be comparable to the tunneling capacitances of the dot. As a result, the measured sensitivity of the S–SET referred to charge on the dot is

1.2×10-4 e/ Hz ,
about an order of magnitude better than previously reported results. The increased sensitivity makes this system ideally suited for broadband measurements such as study of individual tunneling events. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 17 )

Date of Publication:

Oct 2000

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