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Chemical bonding state analysis of silicon carbide layers in Mo/SiC/Si multilayer mirrors by soft x-ray emission and absorption spectroscopy

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5 Author(s)
Muramatsu, Yasuji ; Kansai Research Establishment, Japan Atomic Energy Research Institute, Sayo-gun, Hyogo 679-5148, Japan ; Takenaka, Hisataka ; Ueno, Yuko ; Gullikson, Eric M.
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Soft x-ray emission and absorption spectra in the C K region of Mo/SiC/Si multilayer mirrors were measured using highly brilliant synchrotron radiation to identify the chemical bonding states of the buried silicon carbide layers. Comparison with the C 2p density of state (DOS) spectra, calculated by discrete variational-Xα molecular orbital calculations, of several SiC-based cluster models showed that the measured x-ray spectra approximately agreed with the calculated C 2p–DOS spectra of the c- and h-SiC-based SiCx models in which some silicon atoms were replaced by carbon atoms. The chemical bonding states of the silicon carbide layers in the Mo/SiC/Si multilayer mirrors were therefore estimated to be carbon-excessive silicon carbide. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 17 )