The structures of InxGa1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity. © 2000 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:77
,
Issue:
16
)
Date of Publication:
Oct 2000
- Page(s):
-
2512
-
2514
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.1318933
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Oct 2000