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Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy

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8 Author(s)
Buyanova, I.A. ; Department of Physics and Measurement Technology, Linköping University, Sweden ; Pozina, G. ; Hai, P.N. ; Thinh, N.Q.
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A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaNxAs1-x/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaNxAs1-x alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:77 ,  Issue: 15 )