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Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm

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7 Author(s)
Wilk, A. ; Centre d’Electronique et de Microoptoélectronique de Montpellier (CEM2), UMR CNRS n° 5507, Université de Montpellier II, Sciences et Techniques du Languedoc, case 067, 34095 Montpellier Cedex 05, France ; El Gazouli, M. ; El Skouri, M. ; Christol, P.
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Mid-infrared laser diodes with compressively strained InAsSb/InAs type-II slightly coupled quantum wells are reported. These lasers, grown on InAs by molecular-beam epitaxy, have emission wavelength near 3.5 μm. They exhibit pulsed operation up to 220 K, with at 90 K threshold current density of 150 A/cm2. Ridge lasers continuous wave (cw) operated up to 130 K with cw output power of 40 mW/A/facet and a characteristic temperature T0=40 K. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:77 ,  Issue: 15 )