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Low-frequency noise in cadmium-selenide thin-film transistors

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4 Author(s)
Deen, M.J. ; Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1, Canada ; Rumyantsev, S.L. ; Landheer, D. ; Xu, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1314887 

Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range 10-3≪α≪2×10-2 for Si TFTs and amorphous Si. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 14 )

Date of Publication:

Oct 2000

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