By Topic

GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Xin, H.P. ; Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407 ; Welty, R.J. ; Tu, C.W.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Red light-emitting diodes (LEDs) emitting at 670 nm and employing GaN0.011P0.989 p–n homojunction grown on a (100) GaP substrate by gas-source molecular beam epitaxy with a rf plasma nitrogen source have been obtained. The integrated photoluminescence intensity of GaNP p–n homojunction LED is 5 times stronger than that of Ga0.51In0.49P bulk layer, but the peak width is much broader. Compared to conventional high-brightness AlGaInP red LEDs, our LED structure saves two process steps of etch removing of the GaAs absorbing substrate and wafer bonding to a GaP transparent substrate. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 13 )