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Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge

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4 Author(s)
Singh, Madhusudan ; Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 ; Zhang, Yifei ; Singh, J. ; Mishra, Umesh

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A strong piezoelectric effect and a large spontaneous polarization allow one to incorporate a large electric field (≫106V/cm) and high sheet charge (≫1013cm-2) without doping in the AlGaN/GaN heterostructure. Theoretical studies are done to examine how polarization effects can be exploited to design metal–AlGaN/GaN tunnel junctions. We find that with a proper choice of AlGaN thickness undoped junctions can be made with very high metal to two-dimensional electron gas tunneling. Thus, a Schottky junction can be converted to a tunnel junction without doping. The tunneling probabilities approach those produced in a system doped at ∼4×1019cm-3. This work suggests that very interesting tunnel junctions can be made from undoped AlGaN/GaN heterostructures. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 12 )